System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device

A system for correcting a charged particle beam observation condition comprising:

• an error calculation unit configured to calculate an error in an illumination position of a charged particle beam observing a surface of a substrate, the charged particle beam is controlled by an observation condition corrected by initial correction parameters;
• a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum;
• and
• a main correction unit configured to calculate main correction parameters correcting the observation condition by executing statistical processing using the temporary correction parameters and the initial correction parameters.

A computer implemented method for correcting a charged particle beam lithography condition comprising:

• calculating an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters;
• calculating temporary correction parameters to decrease the error to a minimum;
• and
• calculating a main correction parameter for correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.

A program configured to be executed by a computer for executing an application of a system for correcting a charged particle beam lithography condition, the program comprising:

• instructions for calculating an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters;
• instructions for calculating temporary correction parameters to decrease the error to a minimum;
• and
• instructions for calculating main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.

A method for manufacturing a semiconductor device comprising:

• coating a resist film on a semiconductor wafer;
• calculating an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters, calculating temporary correction parameters to decrease the error to a minimum, calculating main correction parameters, by executing statistical processing using the temporary correction parameters and the initial correction parameters;
• correcting the lithography condition using the main correction parameters;
• and
• exposing the resist film by use of a corrected charged particle beam controlled by the corrected lithography condition.