Method for growing thin oxide films
OwnerMikko Ritala, Antti Rahtu +2inventors
InventorsMikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
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Abstract
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
Claims28
A method for depositing a thin oxide film comprising silicon on a surface of a substrate, the method comprising alternately contacting the surface of the substrate with a metal source material and an oxygen source material, wherein the oxygen source material is a silicon compound comprising at least one alkoxide group.
An atomic layer deposition type process for depositing a thin oxide film comprising a transition metal and silicon on a substrate in a reaction chamber, the process comprising:
- contacting the substrate with a metal compound;
- and
- contacting the substrate with an oxygen source material,
- wherein the oxygen source material is a silicon compound comprising at least one alkoxide group.
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Dependencies are inferred from the claim text.