Barrier layer and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Lin Huang, Ching-Hua Hsieh, Shau-Lin Shue
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Abstract
A barrier layer and a fabrication thereof are disclosed. The barrier layer comprises at least one barrier material selected from the group consisting of Ta, W, Ti, Ru, Zr, Hf, V, Nb, Cr and Mo and at least one component of oxygen, nitrogen or carbon. A ratio of the component to the barrier material is not less than about 0.45. The fabrication method of the barrier layer applies a working pressure for forming the barrier layer from about 0.5 mTorr to about 200 mTorr substantially without forming crystalline material therein.
Claims26
A method for forming a barrier layer, comprising:
- applying a working pressure from about 0.5 mTorr to about 200 mTorr;
- and
- forming the barrier layer without substantially forming crystalline material therein.
The method for forming a barrier layer of claim 26, wherein the barrier layer is a compound made from barrier material selected from the group consisting of Ta, W, Ti, Ru, Zr, Hf V, Nb, Cr and Mo and at least one reaction gas containing at least one component of oxygen, nitrogen or carbon.
A method for forming a barrier layer, comprising:
- applying a working pressure from about 0.5 mTorr to about 200 mTorr,
- applying a target DC power from about 10,000 Watts to about 90,000 Watts;
- applying a wafer bias power from about 100 Watts to about 1,500 Watts;
- and
- forming the barrier layer without substantially forming crystalline material therein.
The method for forming a barrier layer of claim 26, wherein the component is nitrogen and the barrier material is Ta.
A method for forming a barrier layer, comprising a working pressure for forming the barrier layer from about 0.5 mTorr to about 200 mTorr, the barrier layer comprising a compound made from barrier material selected from the group consisting of Ta, W, Ti, Ru, Zr, Hf, V, Nb, Cr and Mo and at least one reaction gas containing at least one component of oxygen, nitrogen or carbon;
- a flow rate of the reaction gas from about 5 standard cubic centimeters per minute (sccm) to about 200 sccm;
- an argon gas with a flow rate from about 5 sccm to about 200 scan;
- a target DC power from about 10,000 Watts to about 90,000 Watts;
- and a wafer bias power from about 100 Watts to about 1,500 Watts.
A barrier layer, the barrier layer comprising at least one barrier material of Ta, W, Ti, Ru, Zr, Hf, V, Nb, Cr or Mo and at least one component of oxygen, nitrogen or carbon, a ratio of the component to the barrier material not less than about 0.45.
A barrier layer, comprising a N/Ta ratio about from 0.45 to about 1.00.
Dependencies are inferred from the claim text.