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US 2006/0068601 A1Published application
Wafer for compound semiconductor devices, and method of fabrication
OwnerJeong-Sik Lee, Tomoya Sugaharainventors
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Abstract
A wafer for fabrication of nitride semiconductor devices such as LEDs, HEMTs and FETs. The matrices of desired semiconductor devices are grown on a silicon substrate via a buffer region designed to keep the wafer from warping. The buffer region is in the form of alternations of multi-sublayered first buffer layers and non-sublayered, open-worked second buffer layers.
Claims11
A wafer for fabrication of semiconductor devices, having a substrate, a buffer region formed on the substrate, and a main semiconductor region of compound semiconductors providing matrices of the semiconductor devices to be made, the buffer region of the wafer comprising:
- (a) a plurality of first buffer layers each having alternating first and second sublayers, the first sublayers of the first buffer layers being made from a nitride semiconductor containing a prescribed proportion of aluminum, the second sublayers of the first buffer layers being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayers of the first buffer layers;
- and
- (b) a plurality of second buffer layers arranged alternately with the first buffer layers, the second buffer layers being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayers of the first buffer layers, each second buffer layer being thicker than each first or second sublayer of the first buffer layers and having a multiplicity of voids created therein.
A method of fabricating semiconductor devices in the form of a wafer, which comprises:
- (a) growing a multi-sublayered first buffer layer on a substrate in a vapor phase, the first buffer layer having a prescribed number of alternations of first and second sublayers, the first sublayers of the first buffer layer being made from a nitride semiconductor containing a prescribed proportion of aluminum, the second sublayers of the first buffer layer being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayers of the first buffer layer;
- (b) growing an open-worked second buffer layer on the first buffer layer in a vapor phase to a thickness greater than that of each first or second sublayer of the first buffer layer, the second buffer layer being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayers of the first buffer layer;
- (c) repeating the vapor-phase growth of the first and the second buffer layers a prescribed number of times to provide a multilayered buffer region;
- and
- (d) growing a main semiconductor region of compound semiconductors on the buffer region in a vapor phase, the main semiconductor region containing matrices of the semiconductor devices to be made.
2 more elements
A method of fabricating semiconductor devices in the form of a wafer, which comprises:
- (a) growing a first sublayer of a first buffer layer on a substrate in a vapor phase within a reactor, the first sublayer being made from a nitride semiconductor containing a prescribed proportion of aluminum;
- (b) growing a second sublayer of the multi-sublayered first buffer layer on the first sublayer in a vapor phase within the reactor, the second sublayer being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayer of the first buffer layer;
- (c) repeating the vapor-phase growth of the first and the second sublayer of the first buffer layer a prescribed number of times to provide one multi-sublayered first buffer layer;
- (d) growing an open-worked second buffer layer on the first buffer layer in a vapor phase within the reactor to a thickness greater than that of each first or second sublayer of the first buffer layer, the second buffer layer being made from a nitride semiconductor containing aluminum in a proportion that is either zero or less than the aluminum proportion of the first sublayers of the first buffer layer;
- (e) repeating the vapor-phase growth of the first and the second buffer layers a prescribed number of times to provide a multilayered buffer region;
- and
- (f) growing a main semiconductor region of compound semiconductors on the buffer region in a vapor phase, the main semiconductor region containing matrices of the semiconductor devices to be made.
4 more elements
Dependencies are inferred from the claim text.