Methods of forming a thin layer for a semiconductor device and apparatus for performing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-Kyung Baek, Kyu-Tae Na, Sang-Ho Rha
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Abstract
The present invention can provide methods of forming a thin layer for a semiconductor device. The methods can include forming a recessed portion on an object, and forming an insulation layer on the object by reacting a water vapor, an oxygen gas including an oxygen radical and an organic silicon source gas with each other, so that the recessed portion is filled with the insulation layer. Accordingly, a flow characteristic of the insulation layer can be improved, so that a seam defect can be sufficiently decreased in the insulation layer. The present invention can further provide apparatus for forming a thin layer.
Claims28
A method of forming a thin layer for a semiconductor device, comprising:
- forming a recessed portion on an object;
- and
- forming an insulation layer on the object by reacting a water vapor, an oxygen gas comprising an oxygen radical and an organic silicon source gas with each other, so that the recessed portion is filled with the insulation layer.
A method of forming a thin layer for a semiconductor device, comprising:
- forming a recessed portion on an object;
- forming a first insulation layer on the object and inner surfaces of the recessed portion by reacting an organic silicon source gas with an ozone gas, so that a size of the recessed portion is reduced, thereby forming a reduced recess;
- and
- forming a second insulation layer on the first insulation layer by reacting a water vapor, an oxygen gas comprising an oxygen radical and an organic silicon source gas with each other, so that the reduced recess is filled with the second insulation layer.
An apparatus for forming a thin layer for a semiconductor device, comprising:
- a processing chamber into which an object comprising a recessed portion is loaded, an insulation layer being formed on the object and the recessed portion being filled with the insulation layer in the processing chamber;
- a first gas supplier for supplying a water vapor into the processing chamber;
- a second gas supplier for supplying an oxygen gas comprising an oxygen radical into the processing chamber;
- and
- a third gas supplier for supplying an organic silicon source gas into the processing chamber.
Dependencies are inferred from the claim text.