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US 2006/0068596 A1Published application
Formation of Controlled Sublithographic Structures
AssigneeInternational Business Machines Corporation
InventorsDavid Dobuzinsky, Jochen Beintner, Siddhartha Panda
Life of this patent
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Abstract
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.
Claims20
A method of forming an integrated circuit structure in a structure layer disposed above a substrate comprising the steps of:
- Forming a hardmask layer disposed above said structure layer;
- Forming a protective layer above said hardmask layer;
- Forming a temporary layer above said protective layer;
- Patterning said temporary layer in a set of pillars in positions related to positions of said structures;
- Forming a conformal layer over said set of pillars, said conformal layer having a top portion on top of said pillars, sidewalls adjacent to sides of said set of pillars and a horizontal portion extending between members of said set of pillars and disposed directly on top of said protective layer;
- Removing at least said top portion of said conformal layer;
- Removing said set of pillars, whereby said protective layer in locations beneath said set of pillars is exposed;
- Etching said protective layer, using said sidewalls as a mask, thereby defining a first set of hardmask regions in said protective layer;
- Etching said hardmask layer using said first set of hardmask regions in said protective layer as hardmask, thereby defining a second set of hardmask in said hardmask layer that are symmetric on opposite sides of said sidewalls;
- and
- Etching said structure layer using said second set of hardmask, thereby forming said structures.
8 more elements
A method of forming an integrated circuit structure in a structure layer disposed above a substrate comprising the steps of:
- Forming a hardmask layer disposed above said structure layer;
- Forming a protective layer above said hardmask layer;
- Forming a temporary layer above said protective layer;
- Patterning said temporary layer in a set of pillars in positions related to positions of said structures;
- Forming a first conformal layer over said set of pillars, said first conformal layer having a top portion on top of said pillars, first sidewalls adjacent to sides of said set of pillars and a first horizontal portion extending between members of said set of pillars and disposed directly on top of said protective layer;
- Removing at least said top portion of said first conformal layer;
- Removing said set of pillars, thereby defining a first set of sidewalls;
- Depositing a second conformal layer over said first set of sidewalls;
- Removing at least said top portion of said second conformal layer;
- Removing said first set of sidewalls, thereby defining a second set of sidewalls formed from said second conformal layer, whereby said protective layer in locations beneath said first set of sidewalls is exposed;
- Etching said protective layer, using said second set of sidewalls as a mask, thereby defining a first set of hardmask regions in said protective layer;
- Etching said hardmask layer using said first set of hardmask regions in said protective layer as hardmask, thereby defining a second set of hardmask in said hardmask layer that are symmetric on opposite sides of said sidewalls;
- and
- Etching said structure layer using said second set of hardmask, thereby forming said structures.
11 more elements
Dependencies are inferred from the claim text.