Back to results
US 2006/0068593 A1Published application
Patterning method
OwnerChang-Hu Tsai, Prudence Wuinventors
Life of this patent
Estimating the term…
Abstract
A patterning method is provided. First, a substrate comprising a film formed thereon is provided. Then, a photoresist layer is formed over the film. Next, the photoresist layer is developed to form a patterned photoresist layer. Then, the film is etched using a dry etching method. In addition, the dry etching method is performed at a temperature range of about −50° C. to about 50° C. using the patterned photoresist layer as an etching mask.
Claims19
A patterning method, comprising:
- providing a substrate having a film formed over thereon;
- forming a photoresist layer over the film;
- exposing and developing the photoresist layer to form a patterned photoresist layer;
- and
- etching the film using the patterned photoresist layer as an etching mask at a temperature range of about −50° C. to about 50° C.
2 more elements
Dependencies are inferred from the claim text.