Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors

Abstract

A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.

Dependencies are inferred from the claim text.