US 2006/0068583 A1 · A METHOD FOR SUPERCRITICAL CARBON DIOXIDE PROCESSING OF FLUORO-CARBON FILMS

Abstract

A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

Claims26

Dependent claims

A method of processing a dielectric film, the method comprising:

providing a substrate having a fluoro-carbon dielectric film deposited thereon, the film having an exposed surface containing contaminants;
and
treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination.

Dependencies are inferred from the claim text.

Facts

Application

10/711,649Filed 29 Sep 2004

Published

30 Mar 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10W 20/096
By modifying materials of the dielectric parts: by contacting with gases, liquids or plasmas
H10P 14/412
Of conductive or resistive materials: deposition of metallic or metal-silicide materials
H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]
H10P 14/6524
By introduction of substances into an already-existing insulating layer: the substance being nitrogen

A method for supercritical carbon dioxide processing of fluoro-carbon films

Life of this patent

A method for supercritical carbon dioxide processing of fluoro-carbon films

Life of this patent

Abstract

Claims26