Silicon epitaxial wafer and method for manufacturing the same

A method for manufacturing a silicon epitaxial wafer, the method comprising:

• a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110};
• and a cooling step of cooling the silicon wafer after growing the epitaxial layer,
• wherein in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more.

A method for manufacturing a silicon epitaxial wafer, the method comprising:

• a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110};
• and a cooling step of cooling the silicon wafer after growing the epitaxial layer,
• wherein a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.