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AssigneeSharp Laboratories of America, Inc.
InventorsSteve Droes, Masao Moriguchi, Yutaka Takafuji
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A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.
A hydrogen (H) exfoliation method for attaching silicon-on-insulator (SOI) substrate fabricated circuits to carrier substrates, the method comprising:
An active silicon (Si) device cleaved from a silicon-on-insulator (SOI) substrate, the active Si device comprising:
Dependencies are inferred from the claim text.