Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates

Abstract

According to various exemplary embodiments of this invention, a method of producing a semiconductor structure is provided that includes providing a layered structure on a first substrate, the layered structure including a silicon layer that is provided over a first dielectric layer, a first dielectric layer that is provided over an etch-stop layer, the etch-stop layer provided over a buffer layer, the buffer layer provided over a sacrificial layer, and a sacrificial layer provided over a first substrate. Moreover, various exemplary embodiments of the methods of this invention provide for a second substrate over the layered structure, separating the first substrate and the sacrificial layer from the buffer layer, separating the buffer layer and the etch-stop layer from the first dielectric layer and providing a drain electrode and a source electrode over the layered structure. Moreover, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a gate electrode over the substrate, a laser recrystallized polycrystalline semiconductor layer over the gate electrode and a source electrode and a drain electrode over the laser recrystallized polycrystalline semiconductor. Finally, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a laser recrystallized polycrystalline semiconductor over the substrate, a source electric and a drain electrode over the laser recrystallized polycrystalline semiconductor and a gate electrode over the source electrode and the drain electrode.

Dependencies are inferred from the claim text.