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AssigneeSTMicroelectronics S.r.l.
InventorsPietro Montanini, Giovanna Germani, Ilaria Gelmi, Marta Mottura
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The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.
Process for etching trenches in a structure comprising a support substrate and a multilayer, formed on the substrate, comprising a core layer and coating layers for the definition of wave guides of an integrated optical device, the process comprising a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched and being
A method, comprising:
A structure, comprising:
An integrated circuit, comprising:
An electronic system, comprising:
Dependencies are inferred from the claim text.