Self-aligned non-volatile memory and method of forming the same

A self-aligned fabrication method for a non-volatile memory, comprising:

• providing a substrate comprising a stacked layer formed thereon;
• forming a sacrificial layer on the stacked layer;
• patterning the sacrificial layer to form a first opening;
• forming a first spacer on a sidewall of the first opening;
• etching the stacked layer using the first spacer and the sacrificial layer as a first mask to form a second opening;
• forming a conductive filling layer filling the first and the second openings;
• and
• etching the stacked layer using the conductive filling layer as a second mask.

A self-aligned non-volatile memory structure, comprising a plurality of pair cells, a plurality of parallel gate lines, and a plurality of bit lines for connecting the pair cells, each of the pair cells comprising:

• a gate electrode coupled to a corresponding gate line;
• two storage blocks respectively disposed at opposing sides of the gate electrode;
• and
• a first contact and a second contact adjacent to the two storage blocks respectively,
• wherein a first and a second pair cells are controlled by one of the gate lines, and one of the bit lines connects the first contact of the first pair cells and the second contact of the second pair cells.