Sequential chemical vapor deposition - spin-on dielectric deposition process

Abstract

A method to fill a valley on a substrate comprises depositing a first material onto the substrate using a chemical vapor deposition process to partially fill the valley and depositing a second material onto the substrate using a spin-on deposition process to completely fill the valley. The chemical vapor deposition process may comprise a high-density plasma chemical vapor deposition process or a low-pressure chemical vapor deposition process. The method may further comprise depositing a sacrificial layer, performing a first curing process on the first and second materials, polishing at least the sacrificial layer to remove at least a portion of the second material, and performing a second curing process on the first and second materials.

Dependencies are inferred from the claim text.