Method for manufacturing semiconductor device, and semiconductor device and electronic device

A method for manufacturing a semiconductor device comprising the steps of:

• forming a peeling layer selectively over a first substrate wherein a portion of said first substrate is not covered by said peeling layer;
• forming a first insulating layer over said peeling layer and said portion of the first substrate;
• forming a thin film transistor including at least a source region and a drain region over the insulating layer;
• forming a second insulating layer over the first insulating layer and the thin film transistor;
• forming a first opening in the first insulating layer and the second insulating layer for exposing a part of the first substrate;
• forming a second opening in the second insulating film for exposing one of the source region and the drain region of the thin film transistor;
• forming a first conductive layer over the second insulating layer wherein the first conductive layer fills the first opening and the second opening;
• forming a third opening in the first insulating layer and the second insulating layer for exposing the peeling layer;
• introducing etchant to the third opening for selectively removing the peeling layer;
• peeling a stacked body including at least the thin film transistor, the second insulating layer and the first conductive layer from the first substrate by using a physical means;
• and
• attaching the stacked body to a second substrate so that the first conductive layer is electrically connected to a second conductive layer provided over the second substrate.

A semiconductor device comprising:

• a thin film transistor including at least a channel forming region, a source region and a drain region;
• a first insulating layer covering the thin film transistor;
• and
• a first conductive layer provided over the first insulating layer,
• wherein the first conductive layer is electrically connected to one of the source region and the drain region of the thin film transistor through a first opening provided in the first insulating layer and is exposed through a second opening provided in the first insulating layer.

A semiconductor device comprising:

• a first conductive layer;
• a thin film transistor including at least a channel forming region, a source region and a drain region provided above the first conductive layer;
• a first insulating layer covering the thin film transistor;
• and
• a second conductive layer provided over the first insulating layer,
• wherein the second conductive layer is electrically connected to one of the source region and the drain region of the thin film transistor through a first opening provided in the first insulating layer and is electrically connected to the first conductive layer through a second opening provided in the first insulating layer.

A semiconductor device comprising:

• a first conductive layer provided over a substrate;
• a first insulating layer covering the first conductive layer;
• a thin film transistor including at least a channel forming region, a source region and a drain region provided over the first insulating layer;
• a second insulating layer covering the thin film transistor;
• and
• a second conductive layer provided over the second insulating layer,
• wherein the second conductive layer is electrically connected to one of the source region and the drain region of the thin film transistor through a first opening provided in the second insulating layer and is electrically connected to the first conductive layer through a second opening provided in each of the first insulating layer and the second insulating layer.

A semiconductor device comprising:

• a first conductive layer provided over a substrate;
• a first insulating layer covering the first conductive layer;
• a second insulating layer covering the first insulating layer;
• a thin film transistor including at least a channel forming region, a source region and a drain region provided over the second insulating layer;
• a third insulating layer covering the thin film transistor;
• and
• a second conductive layer provided over the third insulating layer,
• wherein the second conductive layer is electrically connected to one of the source region and the drain region of the thin film transistor through a first opening provided in the third insulating layer and is electrically connected to the first conductive layer through a second opening provided in each of the first insulating layer, the second insulating layer, and the third insulating layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a peeling layer selectively over a first substrate wherein a portion of said first substrate is not covered by said peeling layer;
• forming a first insulating layer over said peeling layer and said portion of the first substrate;
• forming a thin film transistor including at least a source region and a drain region over the insulating layer;
• forming a second insulating layer over the first insulating layer and the thin film transistor;
• forming a first opening in the first insulating layer and the second insulating layer for exposing a part of the first substrate;
• forming a second opening in the second insulating layer for exposing one of the source region and the drain region of the thin film transistor;
• forming a first conductive layer over the second insulating layer, wherein the first conductive layer fills the first opening and the second opening;
• peeling a stacked body including at least the thin film transistor, the second insulating layer and the first conductive layer from the first substrate;
• and
• attaching the stacked body to a second substrate so that the first conductive layer is electrically connected to a second conductive layer provided over the second substrate.