Back to results
US 2006/0068534 A1Published application
Method for manufacturing semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorToshiyuki Nakamura
Life of this patent
Estimating the term…
Abstract
Laser is applied onto part on an SOS substrate using a sapphire layer to form an identifying mark. The sapphire layer on the surface of the SOS substrate, which has been exposed upon laser application, is covered with an insulating film formed by heat treatment at 700° C. or less, and thereafter a device is formed using heat treatment at a temperature higher than 700° C.
Claims13
A method for forming a semiconductor device, comprising the steps of:
- forming at least one trench on an SOS substrate using a sapphire layer by laser, said trench reaching the sapphire layer;
- forming an insulating film that covers the trench at a temperature less than or equal to 700° C.;
- and
- thereafter performing thermal treatment at a temperature higher than 700° C.
1 more element
A method for forming a semiconductor device, comprising the steps of:
- applying laser onto part of an SOS substrate using a sapphire layer to damage the surface of the sapphire layer;
- heat-treating the surface of the sapphire layer at 700° C. or less to form an insulating film;
- and
- thereafter effecting heat treatment at a temperature higher than 700° C.
1 more element
A method for forming a semiconductor device, comprising the steps of:
- etching part on an SOS substrate using a sapphire layer to expose the surface of the sapphire layer;
- heat-treating the surface of the sapphire layer at 700° C. or less to form an insulating film;
- and
- thereafter effecting heat treatment at a temperature higher than 700° C.
1 more element
Dependencies are inferred from the claim text.