Finfet sram cell using inverted finfet thin film transistors

An integrated circuit, comprising:

• a semiconductor fin (100);
• an inverted FinFET transistor (P2), wherein the fin forms a gate (108) of the inverted FinFET transistor;
• and
• a first FinFET transistor (N1), wherein the fin forms a source (128), drain (124), and channel (126) of the FinFET transistor and wherein the gate of the inverted FinFET transistor is connected to the drain of the first FinFET transistor.

A method, comprising;

• providing a semiconductor fin (100, 102) on a substrate, wherein a portion of the fin forms a gate region (108) of an inverted FinFET transistor (P2) and a body region of a FinFET transistor (N3);
• applying a semiconductor layer (104) over the gate region of the inverted FinFET transistor and the body region of the FinFET transistor, wherein the semiconductor layer forms a source (110), drain (114), and channel (112) of the inverted FinFET transistor and a gate region (122) of the FinFET transistor;
• and
• doping the semiconductor layer with a first dopant type to form the source, drain, and channel of the inverted FinFET transistor and a second dopant type to form the gate region of the FinFET transistor.