Method for manufacturing a CBRAM semiconductor memory
AssigneeInfineon Technologies AG
InventorKlaus-Dieter Ufert
Life of this patent
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Abstract
A method for manufacturing CBRAM switching elements and CBRAM semiconductor memories with improved switching characteristics so as to remove superfluous, weak, cluster-like, or unbound selenium at the surface of a GeSe layer is solved by the present invention in that, after the generation of an active matrix material or GeSe layer, respectively, a reactive sputter etching process is performed in which the surface layer of the active matrix material or GeSe layer, respectively, is removed at least partially so as to modify the surface structure thereof.
Claims21
A method for manufacturing a resistively switching CBRAM semiconductor memory, comprising:
- generating an active matrix material layer or a GeSe layer that is adapted to be placed in a substantially electroconductive state by an electrochemical switching processes;
- and
- after the generation of the active matrix material layer or GeSe layer, performing a reactive sputter etching process in which the surface layer of the active matrix material layer or GeSe layer is removed at least partially so as to modify the surface structure thereof.
A system with a memory device, comprising at least one semiconductor memory manufactured by
- generating an active matrix material layer or a GeSe layer that is adapted to be placed in a substantially electroconductive state by an electrochemical switching processes;
- and
- after the generation of the active matrix material layer or GeSe layer, performing a reactive sputter etching process in which the surface layer of the active matrix material layer or GeSe layer is removed at least partially so as to modify the surface structure thereof.
Dependencies are inferred from the claim text.