Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source

The method for producing a nitride semiconductor laser light source according to claim. 1, wherein the first atmosphere and the second atmosphere each have dry air with a moisture concentration of 1000 ppm or lower.

An apparatus for producing a nitride semiconductor laser light source, the apparatus comprising:

• a baking furnace for cleaning a surface of a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, or a cap for covering the laser chip, the baking furnace heating the laser chip, the stem, or the cap in a first atmosphere, and
• a capping portion for encapsulating, in a second atmosphere, the laser chip with a cleaned surface in a sealed container composed of the stem and the cap each with a cleaned surface.

An apparatus for producing a nitride semiconductor laser light source, the apparatus comprising:

• an ashing treatment equipment for cleaning surfaces of a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip, the treatment equipment exposing the surfaces with an excited oxygen atom;
• and
• a capping portion for supplying a first gas onto the cleaned surfaces of the laser chip, the stem, and the cap, and for encapsulating the laser chip in a sealed container composed of the stem and the cap in an atmosphere of the first gas.