Thin-film formation in semiconductor device fabrication process and film deposition apparatus

A semiconductor device fabrication method comprising:

• a first gas supply step of supplying a first source gas containing a metal onto a semiconductor substrate held in a processing chamber and then removing the first source gas from the chamber;
• a second gas supply step of supplying a second source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the second source gas from the chamber;
• a first repetition step of repeating the first and second gas supply steps to form a first film with a predetermined thickness over the semiconductor substrate;
• a third gas supply step of supplying the first source gas onto the semiconductor substrate and then removing the first gas from the chamber;
• a fourth gas supply step of supplying a plasma-activated third source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the third source gas from the chamber;
• and
• a second repetition step of repeating the third and fourth gas supply steps to form a second film with a predetermined thickness over the first film.

A machine readable computer program product installed in a film deposition apparatus to cause the film deposition apparatus to execute:

• a first film formation process of repeating a predetermined number of times:
• a first step of supplying a first source gas containing a metal into a chamber in which a substrate to be processed is placed and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating a predetermined number of times:
• a third step of supplying the first source gas into the chamber and removing the first gas from the chamber;
• and
• a fourth step of supplying a plasma-activated third source gas containing hydrogen or a hydrogen compound into the chamber and removing the third source gas from the chamber.

A recording medium storing a program for causing a film deposition apparatus to execute:

• a first film formation process of repeating a predetermined number of times
• a first step of supplying a first source gas containing a metal into a chamber in which a substrate to be processed is placed and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating a predetermined number of times
• a third step of supplying the first source gas into the chamber and removing the first gas from the chamber;
• and
• a fourth step of supplying a plasma-activated third source gas containing hydrogen or a hydrogen compound into the chamber and removing the third source gas from the chamber.

A film fabrication method for forming a film over a substrate in a processing chamber, comprising:

• a first film formation process of repeating
• a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating
• a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber;
• and
• a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber.

A semiconductor device fabrication method comprising:

• a first gas supply step of supplying a first source gas containing a metal-organic compound and without containing a halogen element onto a semiconductor substrate held in a chamber and then removing the first source gas from the chamber;
• and
• a second gas supply step of supplying a second source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the second source gas from the chamber;
• a first repetition step of repeating the first and second gas supply steps to form a first film of a predetermined thickness over the semiconductor substrate;
• a third gas supply step of supplying a third source gas containing a metal halide onto the semiconductor substrate and then removing the third gas from the chamber;
• a fourth gas supply step of supplying a fourth source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the fourth source gas from the chamber;
• and
• a second repetition step of repeating the third and fourth gas supply steps to form a second film of the predetermined thickness over the first film.

A machine readable computer product installed in a film deposition apparatus to cause the film deposition apparatus to execute:

• a first film formation process of repeating a predetermined number of times
• a first step of supplying an first source gas containing a metal-organic compound and without containing a halogen element into a chamber in which a substrate to be processed is placed and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating a predetermined number of times
• a third step of supplying a third source gas containing a metal halide into the chamber and removing the third gas from the chamber;
• and
• a fourth step of supplying a fourth source gas containing hydrogen or a hydrogen compound into the chamber and removing the fourth source gas from the chamber.

A recording medium storing a program for causing a film deposition apparatus to execute:

• a first film formation process of repeating a predetermined number of times
• a first step of supplying an first source gas containing a metal-organic compound and without containing a halogen element into a chamber in which a substrate to be processed is placed and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating a predetermined number of times
• a third step of supplying a third source gas containing a metal halide into the chamber and removing the third gas from the chamber;
• and
• a fourth step of supplying a fourth source gas containing hydrogen or a hydrogen compound into the chamber and removing the fourth source gas from the chamber.

A film fabrication method for forming a film over a substrate in a processing chamber, comprising:

• a first film formation process of repeating
• a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating
• a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber;
• and
• a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber.

A semiconductor device fabrication method comprising:

• a first gas supply step of supplying a first source gas containing a metal-organic compound and without containing a halogen element onto a semiconductor substrate held in a processing chamber and then removing the first source gas from the chamber;
• a second gas supply step of supplying a second source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the second source gas from the chamber;
• a first repetition step of repeating the first and second gas supply steps to form a first film with a predetermined thickness over the semiconductor substrate;
• a third gas supply step of supplying a third source gas containing a metal halide compound onto the semiconductor substrate and then removing the third gas from the chamber;
• a fourth gas supply step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound onto the semiconductor substrate and then removing the fourth source gas from the chamber;
• and
• a second repetition step of repeating the third and fourth gas supply steps to form a second film over the first film.

A machine readable computer program product installed in a film deposition apparatus to cause the film deposition apparatus to execute:

• a first film formation process of repeating
• a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating
• a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber;
• and
• a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber.

A recording medium storing a program for causing a film deposition apparatus to execute:

• a first film formation process of repeating
• a first step of supplying a first source gas containing an organic-metal compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber;
• and
• a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber;
• and
• a second film formation process of repeating
• a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber;
• and
• a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber.

A film deposition apparatus comprising:

• a processing chamber;
• a stage configured to hold a substrate to be processed in the processing chamber;
• a first gas supply system configured to supply a first source gas or a third source gas into the processing chamber;
• a second gas supply system configured to supply a second source gas or a fourth source gas into the processing chamber, independently from the first gas supply system;
• and
• plasma excitation means configured to excite the second source gas or the fourth source gas into plasma.