Film forming method

A method of forming a film containing W and Si wherein said film is a tungsten silicide film, comprising:

• a W source supply step of supplying one or more W chemical compounds selected from the group of the following general formula [I] as a W source of said film;
• a decomposition step of decomposing the W chemical compounds supplied in said W source supply step:
• an Si source supply step of supplying SixH(2x+2), where X is an integer of 1 or more, as an Si source of said film;
• and
• a decomposition step of decomposing the Si chemical compounds supplied in said Si source supply step.
• General formula [I]:
• where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.

A method of forming a film containing W and N wherein said film is a tungsten nitride film, comprising:

• a W source supply step of supplying one or more W chemical compounds selected from the group of the following general formula [I] as a W source of said film;
• a decomposition step of decomposing the W chemical compounds supplied in said W source supply step:
• an N source supply step of supplying one or more N chemical compounds selected from the group of ammonia and ammonia producing chemical compounds as an N source of said film;
• and
• a decomposition step of decomposing the N chemical compounds supplied in said N source supply step.
• General formula [I]:
• where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.