Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
AssigneeTokyo Electron Limited
InventorsHideaki Yamasaki, Yumiko Kawano, Gert Leusink
Life of this patent
Estimating the term…
Abstract
A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.
Claims38
A method of depositing a Ru metal layer on a substrate, the method comprising:
- providing a substrate in a process chamber;
- introducing a process gas in the process chamber, the process gas comprising a carrier gas, a ruthenium-carbonyl precursor, and hydrogen gas;
- and
- depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process.
A method of depositing a Ru metal layer on a patterned substrate, the method comprising:
- providing a patterned substrate in a process chamber, the patterned substrate containing one or more vias, trenches or combinations thereof;
- introducing a process gas in the process chamber, the process gas comprising a carrier gas, a ruthenium-carbonyl precursor, and hydrogen gas;
- and
- depositing a Ru metal layer on the patterned substrate by a thermal chemical vapor deposition process.
Dependencies are inferred from the claim text.