Method for forming a passivated metal layer
AssigneesTokyo Electron Limited, International Business Machines Corporation
InventorsHideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert Leusink, Fenton McFeely, Paul Jamison
Life of this patent
Estimating the term…
Abstract
A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
Claims18
A method for forming a passivated metal layer, the method comprising:
- providing a substrate in a process chamber of a processing system;
- exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a thermal chemical vapor deposition process;
- and
- forming a silicon-containing passivation layer or a carbon-containing passivation layer on the rhenium metal layer, wherein the passivation layer is effective to inhibit oxygen-induced growth of Re-containing nodules on a surface of the rhenium metal layer.
2-7. (canceled)
A method for forming a passivated metal layer, the method comprising:
- providing a substrate in a process chamber of a processing system;
- exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a thermal chemical vapor deposition process;
- and
- exposing the rhenium metal layer to a gas containing silicon, carbon, nitrogen, oxygen, or boron, or a combination of two or more thereof, and annealing the substrate to diffuse the respective silicon, carbon, nitrogen, oxygen or boron into at least a surface portion of the rhenium metal layer to form a passivation layer effective to inhibit oxygen-induced growth of Re-containing nodules on a surface of the rhenium metal layer.
A method for forming a passivated metal layer, the method comprising:
- providing a substrate in a process chamber of a processing system;
- exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a thermal chemical vapor deposition process;
- and
- forming a passivation layer on the rhenium metal layer by exposing the substrate to a metal-carbonyl precursor gas and a silicon-containing gas, a carbon-containing gas, an oxygen-containing gas, or a boron-containing gas, or a combination of two or more thereof, whereby the passivation layer is at least one of a metal silicide layer, a metal carbide layer, metal oxide layer, or a metal boride layer, or a combination thereof, and wherein the passivation layer is effective to inhibit oxygen-induced growth of Re-containing nodules on a surface of the rhenium metal layer.
A method for forming a passivated Re layer, the method comprising:
- providing a substrate in a process chamber of a processing system;
- exposing the substrate to a process gas containing a rhenium carbonyl precursor to deposit a Re layer on the substrate in a chemical vapor deposition process;
- forming a tungsten passivation layer on the Re layer;
- and
- forming a silicon passivation layer on the tungsten passivation layer, wherein the tungsten and silicon passivation layers are effective to inhibit oxygen-induced growth of Re-containing nodules on a surface of the Re layer.
(canceled)
A method for forming a passivated metal layer, the method comprising:
- providing a substrate in a process chamber of a processing system;
- exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a thermal chemical vapor deposition process;
- and
- forming a passivation layer on the rhenium metal layer by:
- first, forming a metal layer on the rhenium metal layer,
- second, exposing the metal layer to a silicon-containing gas, a carbon-containing gas, a nitrogen-containing gas, an oxygen-containing gas, or a boron-containing gas, or a combination of two or more thereof, and
- third, diffusing the silicon, carbon, nitrogen, oxygen and/or boron into the metal layer to convert the metal layer to a metal silicide, a metal carbide, a metal nitride, a metal oxide and/or a metal boride,
- wherein the passivation layer is effective to inhibit oxygen-induced growth of Re-containing nodules on a surface of the rhenium metal layer.
Dependencies are inferred from the claim text.