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US 2006/0068091 A1Published application
Method for manufacturing functional film and method for manufacturing thin film transistor
AssigneeSeiko Epson Corporation
InventorAtsushi Denda
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a functional film, including disposing a first ink on a substrate and disposing a second ink on the first ink that has been disposed, the first ink containing at least one of a metal and a metal oxide as a solute, the metal and the metal oxide having a melting point of 900 degrees and above in bulk, upon making the metal and the metal oxide to a particle of having a diameter of from 30 to 150 nm, the particle having a melting point of 255 degrees centigrade and above, and the second ink containing an organic metal salt as a solute.
Claims18
A method for manufacturing a functional film, comprising:
- disposing a first ink on a substrate;
- and
- disposing a second ink on the first ink that has been disposed, wherein the first ink includes at least one of a metal and a metal oxide as a solute, the metal and the metal oxide having a melting point of 900 degrees and above in bulk, upon making the metal and the metal oxide to a particle of having a diameter of from 30 to 150 nm, the particle having a melting point of 255 degrees centigrade and above, and the second ink includes an organic metal salt as a solute.
Dependencies are inferred from the claim text.