Crosspoint memory array utilizing one time programmable antifuse cells

A system comprising:

• a bus;
• a network interface coupled to the bus;
• a processor coupled to the bus;
• and
• a memory array coupled to the processor, the memory array including
• one or more row conductors extending in a first direction,
• one or more column conductors extending in a second direction so as to intersect the one or more row conductors, and
• an anti-fuse device coupled between a crosspoint formed between a first row conductor and a first column conductor, the anti-fuse device having a gate terminal coupled directly to the first row conductor and a body terminal coupled directly to the first column conductor.

A method of programming a crosspoint memory array including one or more row conductors and one or more column conductors, the method comprising:

• applying a first programming voltage to a gate of an anti-fuse device coupled directly to a row conductor of the memory array;
• and
• applying a second programming voltage to a body of the anti-fuse device via a column conductor of the memory array;
• the first and second programming voltages selected such that a voltage differential between the gate and the body is sufficient to breakdown a dielectric layer disposed between the gate and the body of the anti-fuse device.