Maximum swing thin oxide levelshifter

An apparatus comprising:

• means for implementing a first transistor pair (i) as thin oxide device and (ii) configured to receive a differential input signal;
• means for implementing a second transistor pair (i) as thick oxide devices and (ii) configured to generate a differential output signal in response to said differential input signal, wherein said output signal has a voltage higher than said input signal;
• means for implementing a third transistor pair (i) connected between said first and second transistor pairs and (ii) configured to protect said first transistor pair;
• means for implementing a fourth transistor pair (i) connected between said third transistor pair and a ground and (ii) configured to increase an operating speed of said apparatus.

A method for implementing a level shifter comprising the steps of:

• (A) implementing a first transistor pair (i) as thin oxide device and (ii) configured to receive a differential input signal;
• (B) implementing a second transistor pair (i) as thick oxide devices and (ii) configured to generate a differential output signal in response to said differential input signal, wherein said output signal has a voltage higher than said input signal;
• (C) implementing a third transistor pair (i) connected between said first and second transistor pairs and (ii) configured to protect said first transistor pair;
• (D) implementing a fourth transistor pair (i) connected between said third transistor pair and a ground and (ii) configured to increase an operating speed of said level shifter.