MRAM with improved storage and read out characteristics

A magneto resistive memory comprising a plurality of MRAM memory cells with a first ferromagnetic layer or reference layer, respectively, a second ferromagnetic layer or magnetizable memory layer, respectively, that is adapted to be magnetized by an external magnetic field, and a non-magnetic or non-magnetizable intermediate layer that is positioned between the first and the second ferromagnetic layer, wherein the memory cells are each formed at the crosspoints of a cell field constructed of a matrix of column and row supply lines and are connected to the supply lines for transmitting read and write currents, wherein, during a write operation, the magnetic fields generated in the respective supply lines by the write currents add up in an optional crosspoint and thus enable a magnetization or re-magnetization, respectively, of the corresponding memory cell, wherein

• a ferrimagnetic assistant layer is at least partially adjacently positioned at the second magnetizable layer or at the ferromagnetic memory layer (2), respectively, and is adapted to be magnetically coupled therewith.