US 2006/0067113 A1 · Methods for fabricating a magnetic keeper for a memory device

Abstract

An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.

Claims16

Dependent claims

A process for a magnetic keeper for a conductor of an MRAM device, the process comprising:

providing a substrate assembly;
forming a dielectric layer over the substrate assembly;
forming a first barrier layer over the dielectric layer;
forming a magnetic keeper layer over the first barrier layer;
forming a masking layer over the magnetic keeper layer;
patterning the masking layer to form a masking strip;
using the masking strip as a mask in patterning the magnetic keeper layer and the first barrier layer to a magnetic keeper strip and a barrier strip;
forming a second barrier layer over the remaining masking layer, magnetic keeper strip and barrier strip;
and
forming a conductor over the second barrier layer.

7 more elements

Dependencies are inferred from the claim text.

Methods for fabricating a magnetic keeper for a memory device

Life of this patent

Methods for fabricating a magnetic keeper for a memory device

Life of this patent

Abstract

Claims16