Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method

A magnetic memory device, comprising:

• a first write line;
• a second write line extending so as to intersect with the first write line;
• and
• a magnetic storage cell including a pair of magneto-resistive devices,
• wherein the pair of magneto-resistive devices each include:
• a laminate including a magnetic sensitive layer of which the magnetization direction is changed by an external magnetic field and allowing a current to flow therethrough in a direction perpendicular to a laminate surface;
• a toroidal magnetic layer disposed on one surface of the laminate so that a direction along the laminate surface is an axial direction and the first write line and the second write line penetrate through the toroidal magnetic layer, and
• the pair of magneto-resistive devices share a part of the toroidal magnetic layer between them.

A magnetic memory device manufacturing method, the magnetic memory device including a first write line, a second write line extending so as to intersect with the first write line, and a magneto-resistive device including a laminate which includes a magnetic sensitive layer of which the magnetization direction is changed by an external magnetic field, the method comprising:

• a step of forming a pair of laminate portions constituting parts of a pair of the laminates on a substrate on which a pair of rectifying devices are disposed;
• a step of forming a bottom magnetic layer so that at least the pair of laminate portions are covered with the bottom magnetic layer, and thereby completing the formation of the pair of laminates;
• a step of forming a pair of the first write lines on the bottom magnetic layer with a first insulating film in between;
• a step of forming a pair of the second write lines on the pair of first write lines with a second insulating film in between so as to include a portion where the first write lines and the second write lines extend in parallel to each other;
• a laminate pattern forming step of forming a pair of laminate patterns including a portion where the first write lines and the second write lines extend in parallel to each other through etching and patterning the pair of the second write lines, the second insulating film and the pair of first write lines in order;
• and
• a step of forming a pair of toroidal magnetic layers which share a part between them through disposing a top magnetic layer so that the pair of laminate patterns are surrounded with the top magnetic layer with a third insulating film in between, and thereby forming a magnetic storage cell including a pair of the magneto-resistive devices.