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US 2006/0067017 A1Published application
Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
AssigneeKabushiki Kaisha Toshiba
InventorsHiromi Yuasa, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
Life of this patent
Estimating the term…
Abstract
A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
Claims19
1-20. (canceled)
A magnetoresistive effect element comprising:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film.
A magnetoresistive effect element comprising:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film,
- wherein said nonmagnetic intermediate layer is a resistance adjustment layer containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi.
A magnetic head comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic held, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film.
A magnetic head comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film,
- wherein said nonmagnetic intermediate layer is a resistance adjustment layer containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi.
A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium,
- said magnetic reproducing apparatus comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film.
1 more element
A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium,
- said magnetic reproducing apparatus comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film,
- wherein said nonmagnetic intermediate layer is a resistance adjustment layer containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi.
1 more element
Dependencies are inferred from the claim text.