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US 2006/0067015 A1Published application
Magnetic sensor having a seedlayer for providing improved hard magnet properties
AssigneeHitachi Global Storgage Technologies
InventorMustafa Pinarbasi
Life of this patent
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Abstract
A magnetoresistive sensor having a novel seed layer that allows a bias layer formed there over to have exceptional hard magnetic properties when deposited over a crystalline structure such as an AFM layer of in a partial mill sensor design. The seed layer structure may be a CrMo/Si/CrMo sandwich or may also be a CrMo/Si/Cr sandwich and interrupts the epitaxial growth of an underlying crystalline structure, allowing a hard magnetic material formed over the seed layer to have a desired grain structure that is different from that of the underlying crystalline layer.
Claims21
A magnetoresistive sensor, comprising:
- a sensor stack having first and second laterally opposed sides defining an active area;
- a layer of antiferomagnetic material having first and second laterally extending portions that extend beyond the active area of the sensor, the laterally extending portions each having a surface;
- a seed layer formed over the surface of the each laterally extending portion of the layer of antiferromagnetic material, the seed layer comprising a first layer comprising CrMo, a second layer comprising CrMo and a layer comprising Si sandwiched between the first and second layers comprising CrMo;
- and
- first and second hard magnetic layers formed on the seed layer over each of the first and second laterally extending portions of the layer of antiferromagnetic material.
2 more elements
A magnetoresistive sensor, comprising:
- a sensor stack having first and second laterally opposed sides defining an active area;
- a layer of antiferomagnetic layer having first and second laterally extending portions that extend beyond the active area of the sensor, the laterally extending portions each having a surface;
- a seed layer formed over the surface of the each laterally extending portion of the layer of antiferromagnetic material, the seed layer comprising a layer comprising CrMo, a layer comprising Cr and a layer comprising Si sandwiched between the layer comprising CrMo and the layer comprising Cr;
- and
- first and second hard magnetic layers formed on the seed layer over each of the first and second laterally extending portions of the layer of antiferromagnetic material.
2 more elements
A magnetorsistive sensor, comprising:
- a layer of material having a crystalline structure;
- a seed layer formed over the layer having a crystalline structure, the seed layer comprising a first layer comprising CrMo, a second layer comprising CrMo and a layer comprising Si sandwiched between the first and second layers comprising CrMo;
- and
- a hard magnetic material formed over the seed layer.
1 more element
A magnetorsistive sensor, comprising:
- a layer of material having a crystalline structure;
- a seed layer formed over the layer of material having a crystalline structure, the seed layer comprising a layer comprising CrMo, a layer comprising Cr and a layer comprising Si sandwiched between the layer comprising CrMo and the layer comprising Cr;
- and
- a hard magnetic material formed over the seed layer.
1 more element
A magnetic data recording system, comprising:
- a magnetic medium;
- a slider;
- an actuator connected with the slider to move the slider adjacent to a surface of the magnetic medium;
- and
- a magnetoresistive sensor connected with the slider, the magnetoresistive sensor comprising:
- a layer of material having a crystalline structure;
- a seed layer formed over the layer of material having a crystalline structure, the seed layer comprising a first layer comprising CrMo, a second layer comprising CrMo and a layer comprising Si sandwiched between the first and second layers comprising CrMo;
- and
- a hard magnetic material formed over the seed layer.
6 more elements
A magnetic data recording system, comprising:
- a magnetic medium;
- a slider;
- an actuator connected with the slider to move the slider adjacent to a surface of the magnetic medium;
- and
- a magnetoresistive sensor connected with the slider, the magnetoresistive sensor comprising:
- a layer of material having a crystalline structure;
- a seed layer formed over the layer of material having a crystalline structure, the seed layer comprising a layer comprising CrMo, a layer comprising Cr and a layer comprising Si sandwiched between the layer comprising CrMo and the layer comprising Cr;
- and
- a hard magnetic material formed over the seed layer.
6 more elements
A magnetoresistive sensor comprising:
- a plurality of sensor layers;
- a portion of the plurality of sensor layers terminating at first and second laterally opposed sides to define an active sensor area;
- a portion of the plurality of sensor layers extending beyond the active area of the sensor to form first and second laterally extending portions;
- a seed layer formed over the laterally extending portions of the sensor layers, the seed layer comprising a first layer comprising CrMo, a second layer comprising CrMo and a layer comprising Si sandwiched between the first and second layers comprising CrMo;
- and
- a hard magnetic material formed over the seed layer over each of the first and second laterally extending portions of the sensor layers.
3 more elements
A magnetoresistive sensor comprising:
- a plurality of sensor layers;
- a portion of the plurality of sensor layers terminating at first and second laterally opposed sides to define an active sensor area;
- a portion of the plurality of sensor layers extending beyond the active area of the sensor to form first and second laterally extending portions;
- a seed layer formed over the laterally extending portions of the sensor layers, the seed layer comprising a layer comprising CrMo, a layer comprising Cr and a layer comprising Si sandwiched between the layer comprising CrMo and the layer comprising Cr;
- and
- a hard magnetic material formed over the seed layer over each of the first and second laterally extending portions of the sensor layers.
3 more elements
Dependencies are inferred from the claim text.