Method for testing a contact region of a semiconductor module

A method for testing a contact region having a plurality of contacts, of a semiconductor module having a circuit arrangement, comprising:

• actively heating the semiconductor module by electrical heating current formed by a plurality of heating current pulses;
• measuring and evaluating a temperature-dependent physical quantity of the semiconductor module and its temporal profile as measurement quantities;
• determining the electrical and thermal quality of the contacts from the measurement quantity of the semiconductor module and from the temporal profile of the measurement quantity;
• generating different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof by the application of the heating current pulses;
• and
• assigning the different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof to different contacts and are correspondingly evaluated for determining the electrical and thermal quality of the contacts.

A method for testing a contact region having a plurality of contacts, of a semiconductor module having a circuit arrangement, comprising:

• actively heating the semiconductor module by electrical heating current formed by a plurality of heating current pulses;
• measuring and evaluating a temperature-dependent physical quantity of the semiconductor module and its temporal profile as measurement quantities;
• determining the electrical and thermal quality of the contacts from the measurement quantity of the semiconductor module and from the temporal profile of the measurement quantity;
• generating different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof by the application of the heating current pulses;
• and
• assigning the different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof to different contacts and are correspondingly evaluated for determining the electrical and thermal quality of the contacts using a plurality of heating current pulses comprising a first heating current pulse and comprising a second heating current.

A method for testing a contact region having a plurality of contacts, of a semiconductor module having a circuit arrangement, comprising:

• actively heating the semiconductor module by electrical heating current formed by a plurality of heating current pulses;
• measuring and evaluating a temperature-dependent physical quantity of the semiconductor module and its temporal profile as measurement quantities;
• determining the electrical and thermal quality of the contacts from the measurement quantity of the semiconductor module and from the temporal profile of the measurement quantity;
• generating different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof by the application of the heating current pulses;
• and
• assigning the different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof to different contacts and are correspondingly evaluated for determining the electrical and thermal quality of the contacts comprising using temporally separate and temporally successive heating current pulses, in which, by means of or with the first heating current pulse, a first phase of the measurement quantity, and in particular of the forward voltage of the backward diode is generated and assigned, in particular with a temporal profile approximately in the temporal range of the first pulse duration.

A method for testing a contact region having a plurality of contacts, of a semiconductor module having a circuit arrangement, comprising:

• actively heating the semiconductor module by electrical heating current formed by a plurality of heating current pulses;
• measuring and evaluating a temperature-dependent physical quantity of the semiconductor module and its temporal profile as measurement quantities;
• determining the electrical and thermal quality of the contacts from the measurement quantity of the semiconductor module and from the temporal profile of the measurement quantity;
• generating different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof by the application of the heating current pulses;
• and
• assigning the different phases of the measurement quantity of the semiconductor module and in the temporal profile thereof to different contacts and are correspondingly evaluated for determining the electrical and thermal quality of the contacts comprising wherein the plurality of heating pulses is formed by repeated and temporarily successive application of a given heating current pulse having a given pulse duration and a given electrical and thermal power to be imparted.