Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device which is excellent in a contact property between an antireflection film on an Al contained metal film and a conductive plug is provided with good production stability. The semiconductor device includes a semiconductor substrate, an insulating interlayer 101, and a multi-layer structure. The insulating interlayer 101 is formed in the upper portion of the semiconductor substrate. The multi-layer structure is provided on the insulating interlayer 101. A Ti film 105, a TiN film 107, an AlCu film 109, a Ti film 111, a TiN film 113, and an etching adjustment film 115 are sequentially formed in the multi-layer structure. The semiconductor device includes an insulating interlayer 103 and a conductive plug. The insulating interlayer 103 is provided on the insulating interlayer 101 and the multi-layer structure. The conductive plug penetrates the insulating interlayer 103 and the etching adjustment film 115, and an end surface of the conductive plug is located in the TiN film 113. The conductive plug includes a Ti film 117, a TiN film 119, and a W film 121.

Dependencies are inferred from the claim text.