Semiconductor element and a producing method for the same, and a semiconductor device and a producing method for the same

A method of producing a semiconductor element, comprising the steps of:

• forming a metal film serving as a plating electrode on the whole part of a semiconductor substrate having an electrode formed thereon;
• forming a resist film having an opening in the position of said electrode on said metal film;
• depositing a high conductivity metal in columnar form to form a columnar projection by electrolytic plating;
• removing said resist film;
• etching to remove said metal film by using said columnar projection as a mask;
• and
• forming a wet prevention film on the surface of said columnar projection.

A method of producing a semiconductor element, comprising the steps of:

• forming a resist film having an opening in the position of said electrode on a semiconductor substrate having an electrode thereon;
• forming an activation processing layer by activation processing to electroless plating;
• removing said activation layer on the said resist film;
• depositing highly conductive metal in said opening by electroless plating to form a columnar projection;
• removing said resist film;
• and
• forming a wet prevention film on the surface of said columnar projection, wherein after forming of said wet prevention film on the surface of said columnar projection, said wet prevention film on the part of said columnar projection connected to a packaging substrate is removed.

A method of producing a semiconductor element, comprising the steps of:

• forming a resist film having an opening in the position of said electrode on a semiconductor substrate having an electrode thereon;
• forming an activation processing layer by activation processing to electroless plating;
• removing said activation layer on the said resist film;
• depositing highly conductive metal in said opening by electroless plating to form a columnar projection;
• removing said resist film;
• and
• forming a wet prevention film on the surface of said columnar projection, wherein before forming of a wet prevention film on the surface of said columnar projection, a mask is formed on a region of said columnar projection where said wet prevention film should not be formed, and after forming of a wet prevention film on the surface of said columnar projection, said mask is removed.

A method of producing a semiconductor element, comprising the steps of:

• forming a resist film having an opening in the position of said electrode on a semiconductor substrate having an electrode thereon;
• forming an activation processing layer by activation processing to electroless plating;
• removing said activation layer on the said resist film;
• depositing highly conductive metal in said opening by electroless plating to form a columnar projection;
• removing said resist film;
• and
• forming a wet prevention film on the surface of said columnar projection, wherein said wet prevention film is a silicon oxide film or a silicon nitride film deposited by a CVD method.

A method of producing a semiconductor element, comprising the steps of:

• forming a resist film having an opening in the position of said electrode on a semiconductor substrate having an electrode thereon;
• forming an activation processing layer by activation processing to electroless plating;
• removing said activation layer on the said resist film;
• depositing highly conductive metal in said opening by electroless plating to form a columnar projection;
• removing said resist film;
• and
• forming a wet prevention film on the surface of said columnar projection, wherein said forming of said wet prevention film on the surface of said columnar projection is exposing said columnar projection to oxidizing atmosphere to form an oxide film on the surface of said columnar projection.

A method of producing a semiconductor device, comprising the steps of:

• supplying the thermosetting resin having the flux activity effect to either on the tip part of a columnar projection formed on an electrode of a semiconductor element, or a pad of a wiring substrate soldered thereto;
• aligning said columnar projection and a pad of the wiring substrate supplied with predetermined quantity of solder;
• and
• heating and soldering only the tip part of said columnar projection to the pad of said wiring substrate.

A method of producing a semiconductor device, comprising the steps of:

• supplying flux to either of a tip part of a columnar projection formed on an electrode on a semiconductor element or on a pad of a wiring substrate which should be soldered thereto;
• aligning said columnar projection and a pad of a wiring substrate supplied with a pre-determined quantity of solder;
• heating and soldering only a tip part of said columnar projection to a pad on said wiring substrate;
• and
• cleaning and removing said flux, wherein at least before said soldering process, upper surface of said columnar projection or upper portion of side surface and upper surface of said columnar projection is coated with a cap film formed of a metal which is excellent in wettability.

A method of producing a semiconductor device, comprising the steps of:

• supplying flux to either of a tip part of a columnar projection formed on an electrode on a semiconductor element or on a pad of a wiring substrate which should be soldered thereto;
• aligning said columnar projection and a pad of a wiring substrate supplied with a pre-determined quantity of solder;
• heating and soldering only a tip part of said columnar projection to a pad on said wiring substrate;
• and
• cleaning and removing said flux, wherein before a soldering, a cap film is covered on the upper surface of said columnar projection or upper portion of the side surface and upper surface of said columnar projection, said cap film being formed of a resin material which melts in a material having a flux action when soldering is carried out.

A method of producing a semiconductor device, comprising the steps of:

• supplying a thermosetting resin having a flux activity effect to either of a tip part of a columnar projection or on a pad of a wiring substrate soldered thereto;
• aligning said columnar projection formed on an electrode on a semiconductor element and having a solder film on tip end thereof, and a pad on said wiring substrate;
• and
• heating and soldering only a tip part of said columnar projection to a pad on said wiring substrate.

A method of producing a semiconductor device, comprising the steps of:

• supplying flux to either of a tip part of a columnar projection or on a pad of a wiring substrate soldered thereto;
• aligning said columnar projection formed on an electrode on a semiconductor element and having a solder film on tip end thereof, and a pad on said wiring substrate;
• heating and soldering only a tip part of said columnar projection to a pad on said wiring substrate;
• and
• removing and cleaning said flux.

A method of producing a semiconductor device, comprising the steps of:

• cleaning the tip surface of a columnar projection formed on an electrode on a semiconductor element and the pad surface on a wiring substrate by a physical shock of an inactive gas excited by plasma;
• aligning said columnar projection and a pad of said wiring substrate;
• and
• adhering said columnar projection and said pad said while pressurizing said semiconductor element and said wiring substrate.