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US 2006/0065928 A1Published application
Semiconductor device
AssigneeNEC Electronics Corporation
InventorTakayuki Nagai
Life of this patent
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Abstract
The invention provides a semiconductor apparatus capable of achieving a device having a snap-back resisting pressure of about 5 to 10 V by a self-aligning process. The semiconductor apparatus includes two or more sub-gates placed next to a main gate at a predetermined interval, and low concentration layers placed continuously from the ends of source/drain layers to near the end of the main gate, having a potential type same as that of the source/drain layers, and having an impurity concentration lower than that of the source/drain layers.
Claims18
A MOS transistor comprising:
- a main gate formed on a substrate;
- at least one sub gate placed next to said main gate formed on said substrate;
- a source/drain region formed on said substrate;
- and
- an impurity diffusion region placed continuously from the end of said source/drain region to near the end of said main gate under said sub-gate, said impurity region having a conductivity type which is the same as that of said source/drain region and having an impurity concentration lower than that of said source/drain region.
2 more elements
A MOS transistor comprising:
- a semiconductor substrate of a first conductivity type;
- an element isolation region formed on said semiconductor substrate to define an element formation region;
- a main gate formed on said element formation region;
- at least one sub gate formed on said element formation region and adjacently to said main gate;
- at least one source/drain region of a second conductivity type formed between said sub gate and said element isolation region, said second conductivity type being different from said first conductivity type;
- and
- at least one impurity diffusion region of said second conductivity type formed between said source/drain region and said main gate under said sub-gate, said impurity diffusion region having an impurity concentration lower than that of said source/drain region.
4 more elements
Dependencies are inferred from the claim text.