Semiconductor device and method of fabricating the same
AssigneeMatsushita Electronics Corporation
InventorsYoshihisa Nagano, Yasuhiro Uemoto
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Abstract
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
Claims9
A semiconductor device comprising:
- a protective insulating film deposited on a semiconductor substrate having first and second field-effect transistors formed thereon;
- a capacitor composed of a capacitor lower electrode, a capacitor insulating film made of an insulating metal oxide, and a capacitor upper electrode which are formed in upwardly stacked relationship on the protective insulating film,
- a first contact plug formed in the protective insulating film to provide a direct connection between an impurity diffusion layer serving as a source or drain region of the first field-effect transistor and the capacitor lower electrode;
- a second contact plug formed in the protective insulating film to provide a connection between an impurity diffusion layer serving as a source or drain region of the second field-effect transistor and the capacitor upper electrode;
- and
- a hydrogen barrier film entirely covering a plurality of the capacitor upper electrode, and the hydrogen barrier film also continuously covering the capacitor upper electrode and an upper portion of the second contact plug.
A semiconductor device comprising:
- a first protective insulating film deposited on a semiconductor substrate having first and second field-effect transistors formed thereon;
- a capacitor composed of a capacitor lower electrode, a capacitor insulating film made of an insulating metal oxide, and a capacitor upper electrode which are formed in upwardly stacked relationship on the protective insulating film,
- a first contact plug formed in the protective insulating film to provide a direct connection between an impurity diffusion layer serving as a source or drain region of the first field-effect transistor and the capacitor lower electrode;
- a second contact plug formed in the protective insulating film to provide a connection between a first impurity diffusion layer serving as a source or drain region of the second field-effect transistor and the capacitor upper electrode,
- a hydrogen barrier film entirely covering a plurality of the capacitor upper electrode and the hydrogen barrier film also continuously covering the capacitor upper electrode and an upper portion of the second contact plug,
- a second protective insulating film formed on the first protective insulating film and the hydrogen barrier film, and
- an interconnection formed on the second protective insulating film electrically connected to a second impurity diffusion layer serving as another source or drain region of the second field-effect transistor.
Dependencies are inferred from the claim text.