Refractive index changing apparatus and method

A refractive index changing apparatus comprising:

• a plurality of quantum dots each having discrete energy levels including a ground level and an excited level, the excited level being higher than the ground level even if energy due to an ambient temperature is provided on the quantum dots;
• a barrier structure unit formed of a dielectric which surrounds the quantum dots;
• an injection unit configured to inject an electron into a position of the ground level in each of the quantum dots via the barrier structure unit, utilizing a tunneling effect, injecting the electron controlled by changing an energy level of the injection unit;
• a first light source which emits, to the quantum dots, a first light beam having first energy for exciting electrons from the ground level to the excited level;
• and
• a second light source which emits, to the quantum dots, a second light beam having second energy different from the first energy.

A refractive index changing apparatus comprising:

• a plurality of quantum dots each having discrete energy levels including a ground level and an excited level, the excited level being higher than the ground level even if energy due to an ambient temperature is provided on the quantum dots;
• a barrier structure unit formed of a dielectric which surrounds the quantum dots;
• a preventing unit configured to prevent injection of an electron into the position, preventing injection of the electron controlled by changing an energy level of the injection unit;
• a first light source which emits, to the quantum dots, a first light beam having first energy for exciting electrons from the ground level to the excited level;
• and
• a second light source which emits, to the quantum dots, a second light beam having second energy different from the first energy.

A refractive index changing apparatus comprising:

• a plurality of quantum dots each having discrete energy levels including a ground level and an excited level, the excited level being higher than the ground level even if energy due to an ambient temperature is provided on the quantum dots;
• a barrier structure formed of a dielectric which surrounds the quantum dots;
• means for inject an electron into a position of the ground level in each of the quantum dots via the barrier structure, utilizing a tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit;
• means for emitting, to the quantum dots, a first light beam having first energy for exciting electrons from the ground level to the excited level;
• and
• means for emitting, to the quantum dots, a second light beam having second energy different from the first energy.