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US 2006/0065898 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeToyoda Gosei Co., Ltd.
InventorsMasanori Murakami, Teppei Watanabe, Susumu Tsukimoto, Kazuhiro Ito, Jun Ito, Miki Moriyama, Naoki Shibata
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Abstract
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
Claims20
A semiconductor device comprising:
- a group III nitride compound semiconductor layer;
- and
- an undercoat layer comprising metal nitride,
- wherein the group III nitride compound semiconductor layer is formed on the undercoat layer without a low temperature grown buffer layer provided therebetween.
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A method of manufacturing a semiconductor device comprising:
- forming an undercoat layer comprising metal nitride on a substrate;
- nitriding the undercoat layer;
- and
- forming a group III nitride compound semiconductor layer on the nitrided undercoat layer without providing a low temperature grown buffer layer therebetween.
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A method of manufacturing a light emitting device comprising:
- forming a titanium nitride layer on a substrate at a substrate temperature of 600° C.;
- nitriding the titanium nitride layer while raising the substrate temperature to not lower than 1100° C.;
- and
- forming a group III nitride compound semiconductor layer on the titanium nitride layer.
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Dependencies are inferred from the claim text.