CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device
AssigneeSony Corporation
InventorsHideshi Abe, Keiji Tatani, Kazuichiro Itonaga
Life of this patent
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Abstract
In a CMOS solid-state imaging device, to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels 2A and 2B are separated by element isolation portion 82 formed of a diffusion layer 43 and an insulating layer 44 thereon, and the insulating layer 44 of the element isolation portion 82 is formed in a position equal to or shallower than the position 45j of a pn junction on the side of accumulation layer 39 of a photoelectric conversion portion constituting a pixel.
Claims15
A CMOS solid-state imaging device comprising:
- a plurality of pixels each of which includes a photoelectric conversion portion and a transistor,
- wherein an element isolation portion within each of said plurality of pixels is formed of a diffusion layer.
A CMOS solid-state imaging device comprising:
- a plurality of pixels each of which includes a photoelectric conversion portion,
- wherein adjacent ones of said plurality of pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon.
A CMOS solid-state imaging device comprising:
- a plurality of pixels each of which includes a photoelectric conversion portion,
- wherein said photoelectric conversion element in a first pixel included in said plurality of pixels and a source/drain region of a transistor in a second pixel adjacent to said first pixel are separated from each other by an element isolation portion formed of a diffusion layer and an insulating layer thereon and wherein said source/drain region is formed apart from said diffusion layer.
A method of manufacturing a CMOS solid-state imaging device in which adjacent pixels are separated by element isolation portion formed of a diffusion layer and an insulating layer thereon
- comprising the processes of:
- depositing a silicon nitride film on a substrate and forming an opening in a portion of said silicon nitride film where element isolation should be formed;
- forming a silicon oxide film within said opening;
- and
- removing said silicon nitride film and forming an insulating layer of said element isolation portion using said silicon oxide film whose surface protrudes from said substrate surface.
A method of driving a CMOS solid-state imaging device having a plurality of pixels, adjacent ones of which are separated by element isolation portion formed of a diffusion layer and an insulating layer thereon,
- wherein each of said plurality of pixels is driven where at least the electrical potential of a source drain region of a transistor of another pixel adjacent to a photoelectric conversion portion of a pixel with said element isolation portion in between is set to the potential not becoming 0V in a charge-accumulation period in which charges are accumulated in said photoelectric conversion portion.
Dependencies are inferred from the claim text.