Semiconductor memory device
AssigneesRenesas Technology Corp., Renesas Device Design Corp.
InventorsNorihiko Hakushi, Atsushi Ohba, Yoshimasa Yoshimura, Takeshi Nakayama
Life of this patent
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Abstract
A semiconductor memory device including a flash memory and a RAM incorporating a pseudo-SRAM contained in an MCP, has an internal transfer control signal for controlling internal data transfer between the flash memory and pseudo-SRAM, and an external transfer control signal for controlling data transfer between an external CPU and pseudo-SRAM, as control signals for the pseudo-SRAM. A flash controller in the RAM controls the internal transfer control signal so as to suspend the internal data transfer between the flash memory and pseudo-SRAM when the external CPU requests access to the pseudo-SRAM during the internal data transfer.
Claims5
A semiconductor memory device comprising:
- a first memory which is non-volatile;
- and
- a second memory having a random access function, the first and second memories contained in one package, and the semiconductor memory capable of performing internal data transfer between the first and second memories,
- wherein the second memory has an internal data transfer control signal that controls the internal data transfer, and an external transfer control signal that controls data transfer between an external CPU and the second memory,
- the second memory incorporates a controller that controls data access to the first and second memories, and
- when an access to the second memory is requested from the external CPU during the internal data transfer, the controller controls the internal transfer control signal so that the internal data transfer is suspended.
2-5. (canceled)
8-11. (canceled)
Dependencies are inferred from the claim text.