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OwnerMasayuki Jyumonji, Masato Hiramatsu +1inventors
InventorsMasayuki Jyumonji, Masato Hiramatsu, Masakiyo Matsumura
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An amorphous silicon layer is deposited on a glass substrate via an underlayer insulating film, and further a light-emitting layer is inserted between the glass substrate and the underlayer insulating film in a partial region on the glass substrate. To measure light intensity distribution of laser light applied to the amorphous silicon layer, the laser light is applied to the light-emitting layer from the surface of a substrate to be treated. The light intensity distribution of the light emitted from the light-emitting layer is two-dimensionally imaged using an optical image pickup system from the back surface of the substrate to be treated, and measured using an image pickup device. The light intensity distribution of the laser light in the face to be treated is obtained from the light intensity distribution of the emission measured in this manner.
A semiconductor device comprising:
A method of measuring light intensity distribution in a plane of a non-single crystal semiconductor thin film formed on a substrate, the method comprising:
A laser annealing apparatus which applies laser light to a substrate to be treated having a non-single crystal semiconductor thin film and which grows crystal grains from the non-single crystal semiconductor thin film, the substrate to be treated having a light-emitting layer or a light-emitting region which receives the laser light to emit visible light, the laser annealing apparatus comprising:
A crystallization method of applying laser light whose phase has been modulated to a substrate to be treated having a non-single crystal semiconductor thin film to form a crystallized region from the non-single crystal semiconductor thin film, the method comprising:
Dependencies are inferred from the claim text.