Low temperature susceptor cleaning
OwnerJannes Van Den Berginventor
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Abstract
The surface of a susceptor for supporting a substrate during semiconductor processing is sandblasted and/or treated with a chemical etch in a low temperature cleaning treatment. The cleaning treatment can be performed after grinding the susceptor to the desired dimensions and smoothness during the manufacture of the susceptor. The sandblasting or chemical etch removes contaminants remaining after the grinding. As a result, these contaminants are no longer able to contaminate substrates that are later processed on the susceptor. In addition, a silicon carbide finish film can be deposited on the susceptor to form a surface with a desired roughness and to act as a diffusion barrier to prevent impurities in the susceptor from diffusing out and contaminating substrates supported on the susceptors.
Claims43
A method of manufacturing a susceptor, comprising:
- chemical vapor depositing a silicon carbide material;
- subjecting the deposited silicon carbide material to a mechanical, abrasive treatment;
- and
- subsequently subjecting the treated silicon carbide material to a low temperature cleaning.
A method of manufacturing a susceptor, comprising:
- forming a silicon carbide susceptor;
- planarizing surfaces of the susceptor by abrasion;
- and
- removing a layer of silicon carbide from at least a portion of the susceptor after planarizing, wherein a thickness of the removed layer of silicon carbide is about 0.6 μm or more.
A method of cleaning a susceptor for supporting semiconductor substrates, comprising:
- providing a semiconductor substrate susceptor;
- subjecting the susceptor to a cleaning treatment at a temperature of about 500° C. or less.
Dependencies are inferred from the claim text.