US 2006/0065629 A1 · Method for treating a substrate

Abstract

A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

Claims38

Dependent claims

A method of treating a substrate in a plasma processing system comprising:

disposing said substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space;
introducing a first gas to said plasma space;
introducing a second gas to said process space;
forming a plasma in said plasma space from said first gas using a plasma source coupled to said upper chamber portion;
and
forming a process chemistry for treating said substrate in said process space by providing a grid positioned between said first chamber portion and said second chamber portion such that said plasma can diffuse from said plasma space to said process space.

3 more elements

Dependencies are inferred from the claim text.

Method for treating a substrate

Life of this patent

Method for treating a substrate

Life of this patent

Abstract

Claims38