Methods and apparatus for tuning a set of plasma processing steps

In a plasma processing system, including a plasma reactor, a method of tuning of a set of plasma processing steps, comprising:

• positioning said movable uniformity ring around said substrate, wherein a top surface of said uniformity ring is at a first height above a bottom surface of said plasma reactor;
• striking a first plasma comprising neutrals and ions in said plasma reactor;
• etching in a first etching step a set of layers on a substrate, wherein a first amount of etch uniformity on said substrate is achieved;
• repositioning said movable uniformity ring around said substrate, wherein said top surface of said uniformity ring is at a second height above said bottom surface of said plasma reactor;
• striking a second plasma consisting essentially of neutrals;
• etching in a second etching step said set of layers on said substrate, wherein a second amount of etch uniformity on said substrate is achieved;
• wherein said first amount of etch uniformity and said second amount of etch uniformity are substantially uniform.

In a plasma processing system, an apparatus for tuning of a set of plasma processing steps, comprising:

• means of striking a first plasma comprising neutrals and ions in a plasma reactor of said plasma processing system;
• means of etching in a first etching step a set of layers on a substrate;
• means of positioning a movable uniformity ring around said substrate, wherein a bottom surface of said uniformity ring is about the same height as a top surface of said substrate;
• means of striking a second plasma consisting essentially of neutrals in said plasma reactor;
• means of etching in a second etching step said set of layers on said substrate;
• wherein said etching in said first step and said etching in said second step are substantially uniform.

In a plasma processing system, including a plasma reactor, an apparatus for tuning of a set of plasma processing steps, comprising:

• means of positioning a movable uniformity ring around said substrate, wherein a top surface of said uniformity ring is at a first height above a bottom surface of said plasma reactor;
• means of striking a first plasma comprising neutrals and ions in said plasma reactor;
• means of etching in a first etching step a set of layers on a substrate, wherein a first amount of etch uniformity on said substrate is achieved;
• means of repositioning said movable uniformity ring around said substrate, wherein said top surface of said uniformity ring is at a second height above said bottom surface of said plasma reactor;
• means of striking a second plasma consisting essentially of neutrals;
• means of etching in a second etching step said set of layers on said substrate, wherein a second amount of etch uniformity on said substrate is achieved;
• wherein said first amount of etch uniformity and said second amount of etch uniformity are substantially uniform.