US 2006/0065622 A1 · Method and system for xenon fluoride etching with enhanced efficiency

Abstract

Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

Claims34

Dependent claims

An apparatus for etching comprising an etching chamber and a etchant module, wherein

the etchant module is movable between a retracted position and an extended position,
in the retracted position, the etchant module is substantially outside the etching chamber, and
in the extended position the etchant module is substantially within the etching chamber.

Dependencies are inferred from the claim text.

Method and system for xenon fluoride etching with enhanced efficiency

Life of this patent

Method and system for xenon fluoride etching with enhanced efficiency

Life of this patent

Abstract

Claims34