Electrolytic copper plating solutions
OwnerLeon Barstad, James Rychwalski +5inventors
InventorsLeon Barstad, James Rychwalski, Mark Lefebvre, Stephane Menard, James Martin, Robert Schetty, Michael Toben
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Abstract
The present invention provides inter alia copper electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.
Claims20
1-27. (canceled)
A method for electrolytic copper filling interconnect features in a semiconductor integrated circuit device, the method comprising:
- (a) immersing a semiconductor integrated circuit substrate having trenches and/or vias in an electrolytic composition, the electrolytic composition comprising:
- (i) copper in an amount sufficient to electrodeposit copper onto the substrate;
- (ii) an organic divalent sulfur compound that comprises one or more sulfonic groups;
- (iii) a polyether compound;
- (b) supplying current to the electrolytic composition to fill copper into the trenches and/or vias and thereby yield a semiconductor integrated circuit substrate with copper-filled via and trench interconnect features.
An aqueous acidic electrolytic composition comprising:
- (a) copper in an amount sufficient to electrodeposit copper on a substrate;
- (b) an organic divalent sulfur compound that comprises one or more sulfonic groups;
- and
- (c) a polyether compound.
A method for electrolytic copper filling interconnect features in a semiconductor integrated circuit device, the method comprising:
- (a) immersing a semiconductor integrated circuit substrate having trenches and/or vias in an electrolytic composition, the electrolytic composition comprising:
- (i) copper in an amount sufficient to electrodeposit copper onto the substrate;
- (ii) an organic divalent sulfur compound that comprises one or more sulfonic groups;
- (iii) a polyether compound comprising R—O—(CXYCX′Y′O)nH
- where R is an aryl or alkyl group containing from about 2 to 20 carbon atoms;
- each X, Y, X′ and Y′ is independently hydrogen, alkyl, aryl, or aralkyl;
- and n is an integer between 5 and 100000;
- (b) supplying current to the electrolytic composition to fill copper into the trenches and/or vias and thereby yield a semiconductor integrated circuit substrate with copper-filled via and/or trench interconnect features.
Dependencies are inferred from the claim text.