RF ground switch for plasma processing system

The arrangement of claim wherein said insulator structure is formed of ceramics.

In a plasma processing system, an method for selectively providing an RF grounding path between an electrode and ground, comprising:

• providing an RF conduction path structure, said RF conduction path structure being configured to provide an RF conduction path between an RF power subsystem and said electrode;
• providing an annular structure formed of an electrically conductive material;
• and positioning said RF conduction path structure and said annular structure in one of two relative positions relative to one another, a first relative position of said two relative positions being characterized by said annular structure electrically coupling with said RF conduction path structure to provide a ground to said RF conduction path structure, a second relative position of said two relative positions being characterized by said annular structure being electrically uncoupled from said RF conduction path.