Method to address carbon incorporation in an interpoly oxide

A method of removing a photoresist layer on a semiconductor wafer, the method comprising:

• performing a dry stripping process to remove the photoresist layer on the semiconductor wafer;
• horizontally rotating the semiconductor wafer and performing a wet cleaning process on the semiconductor wafer, the wet cleaning process comprising:
• using a first cleaning solution to perform a first cleaning process to remove particles on the surface of the semiconductor wafer, the first cleaning solution being either deionized water (DI water) containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4);
• and
• using a second cleaning solution to perform a second cleaning process to remove a first cleaning solution employed in the first cleaning process, the second cleaning solution being DI water, and
• spin-drying the semiconductor wafer.

A method of processing a wafer, the method comprising:

• providing a wafer having a polysilicon surface layer covered by amorphous carbon, thereby contaminating the polysilicon surface layer with interfacial carbon;
• dry stripping the polysilicon surface layer;
• washing the wafer with either a solution of water, ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4);
• and
• rinsing the wafer.

A method of manufacturing an electronic device, in which a substrate is placed inside a process chamber and a surface of the substrate is subjected to a treatment comprising:

• performing a dry stripping process to remove a mask layer on the substrate;
• horizontally rotating the substrate and performing a wet cleaning process on the substrate, the wet cleaning process comprising:
• using a first cleaning solution to perform a first cleaning process to remove particles on the surface of the semiconductor wafer, the first cleaning solution being either deionized water (DI water) containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4);
• using a second cleaning solution to perform a second cleaning process to remove a first cleaning solution employed in the first cleaning process, the second cleaning solution being DI water;
• using a third cleaning solution to perform an optional third cleaning process to remove particles on the surface of the semiconductor wafer;
• using a fourth cleaning solution to perform an optional fourth cleaning process to remove a residual third cleaning solution employed in the third cleaning process if the optional third cleaning process is performed, the fourth cleaning solution being DI water;
• and
• spin-drying the semiconductor wafer.