Susceptor
AssigneeToshiba Ceramics Co., Ltd.
InventorMasanari Yokogawa
Life of this patent
Estimating the term…
Abstract
A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.
Claims4
A susceptor at least a surface thereof being coated with SiC, comprising a recess where an wafer is mounted, the recess including:
- a round portion disposed on a lower portion of an outer circumferential portion of the recess;
- a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and
- a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.
Dependencies are inferred from the claim text.